2013. 9. 23 1/6 semiconductor technical data KP8N60D/i n channel mos field effect transistor revision no : 0 general description this super junction mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for active power factor correction and switching mode power supplies. features h v dss =600v, i d =8a h drain-source on resistance : r ds(on) (max)=0.58 ? @v gs =10v h qg(typ.)= 16nc maximum rating (tc=25 ? ) characteristic symbol rating unit drain-source voltage v dss 600 v gate-source voltage v gss ? 30 v drain current @t c =25 ? i d 8 a @t c =100 ? 5 pulsed (note1) i dp 18* single pulsed avalanche energy (note 2) e as 125 mj repetitive avalanche energy (note 1) e ar 3.7 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 ? p d 73.5 w derate above 25 ? 0.59 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 1.7 ? /w thermal resistance, junction-to-ambient r thja 110 ? /w g d s pin connection dpak (1) dim millimeters a a b b c c d d f ff h g k g j l k l m 0.96 max 0.90 max e e m n h 0.70 min o 0.1 max n 123 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ j o 1. gate 2. drain 3. source ipak(1) 123 a a b b c c d d e e f ff g g h h j j l l 0.96 max k m p m n p n k 6.6 0.2 + _ 6.1 0.2 + _ 5.34 0.3 + _ 0.7 0.2 + _ 9.3 0.3 + _ 2.3 0.2 + _ 0.76 0.1 + _ 2.3 0.1 + _ 0.5 0.1 + _ 1.8 0.2 + _ 0.5 0.1 + _ 1.0 0.1 + _ + _ 1.02 0.3 dim millimeters 1. gate 3. source 2. drain KP8N60D kp8n60i * : drain current limited by maximum junction temperature.
2013. 9. 23 2/6 KP8N60D/i revision no : 0 electrical characteristics (tc=25 ? ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 600 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 ? - 0.6 - v/ ? drain cut-off current i dss v ds =600v, v gs =0v - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.0 - 4.0 v gate leakage current i gss v gs = ? 30v, v ds =0v - - ? 100 na drain-source on resistance r ds(on) v gs =10v, i d =4a - 0.52 0.58 ? dynamic total gate charge q g v ds =480v, i d =8a v gs =10v (note 5) - 16 - nc gate-source charge q gs - 3.1 - gate-drain charge q gd - 6.5 - turn-on delay time t d(on) v dd =300v i d =8a r g =25 ? (note4,5) - 19 - ns turn-on rise time t r - 20 - turn-off delay time t d(off) - 49 - turn-off fall time t f - 15 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 600 - pf output capacitance c oss - 550 - reverse transfer capacitance c rss - 2.7 - source-drain diode ratings continuous source current i s v gs 2013. 9. 23 3/6 KP8N60D/i revision no : 0 normalized breakdown voltage bv dss gate - source voltage v gs (v) fig1. i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 0 10 -1 10 1 68 4 210 0 fig2. i d - v gs fig3. bv dss - t j fig4. r ds(on) - i d 050 25 0.9 1.0 1.3 1.2 1.1 75 100 125 150 drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ? ) fig5. i s - v sd 0.2 0.4 0.8 1.0 1.2 0.6 1.6 1.4 reverse drain current i s (a) 1.2 0.8 0.6 0.4 0.2 1.0 04 212 610 8 junction temperature tj ( ) c source - drain voltage v sd (v) 10 0 10 -1 10 1 10 2 fig6. r ds(on) - t j junction temperature t j ( ) 0 50 -100 -50 100 150 normalized on resistance 0.0 0.5 3.0 2.5 1.0 1.5 2.0 c v gs =10v i ds = 4a v gs = 0v i ds = 250 100 c 25 c 1100 0.1 10 0.1 1 10 100 v gs =7,10v v ds =20v v gs =5v 100 c 25 c v gs =7v v gs =10v
2013. 9. 23 4/6 KP8N60D/i revision no : 0 drain current i d (a) gate - charge q g (nc) drain - source voltage v ds (v) 0 12 10 6 2 4 8 20 41216 8 0 fig8. q g - v gs fig9. safe operation area gate - source voltage v gs (v) 10 1 10 2 1 10 2 10 1 10 3 10 4 10 1 10 -1 10 0 10 0 10 - 2 10 2 10 3 i d =8a v ds = 480v fig 7. c - v ds drain - source voltage v ds (v) capacitance (pf) 0 10203040 c rss c oss c iss time ( sec ) fig11. transient thermal response curve transient thermal resistance ( c/w) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 10 1 dut y=0 . 5 s in gle pulse 0.05 0.02 0.2 0.01 0 .1 t 1 t 2 p dm - duty factor, d= t 1 /t 2 - r th(j-c) = 1.7 c/w max. 10 ? dc 10 100 ? 1 t c = 25 t j = 150 single pulse c c drain current i d (a) junction temperature t j ( c) fig10. i d - t j 8 10 50 25 4 2 6 0 0 100 75 125 150 operation in this area is limited by r ds(on)
2013. 9. 23 5/6 KP8N60D/i revision no : 0 fig12. gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 ? r l q g q gd q gs q t p fig14. resistive load switching fig13. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss
2013. 9. 23 6/6 KP8N60D/i revision no : 0 fig15. source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.5 v dss
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